| 1. | Ion bombardment secondary electron image
离子轰击二次电子象
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| 2. | Secondary electron detector
二次电子探测器
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| 3. | The secondary electron effect is incorporated into the simulation , which are divided into true secondary and reflected primary electrons
分析了次级电子发射的特性,在模拟中将次级电子近似分为真实次级电子和反射的原电子分别处理。
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| 4. | When primary electrons hit the surface of the chunnel , secondary electrons are generated , which make the electron distribution at the exit hole of the chunnel more uniform
当初始电子碰撞绝缘壁时，会产生二次电子，而二次电子能改善电子在通道出口处的电子能量分布的均匀性。
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| 5. | In chapter 2 , the principles of mdc for twts , refocusing and the influence of the secondary electrons are analyzed . the electron energy entering the collector is analyzed
第二章从分析互作用后电子能量分布入手,分析多级降压收集极的工作原理、再聚焦原理和次级电子的影响。
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| 6. | A mdc with a refocusing system is simulated with the help of a 2 . 5 - dimensional ( 2 . 5 - d ) software , in which the secondary electrons are considered . these jobs offer a guarantee for the improvement of the tube efficiency . the organization of this paper is as follows
论文的主要内容概括如下:在第一章概述中,首先介绍了行波管及其发展情况,接着介绍了多级降压收集极和效率问题,分析了提高效率的方法。
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| 7. | The qualification of multipactor and the characteristic of the angle and velocity of secondary electron were study . bring forward a improved model of multipactor and solve it by a random sample made by monte carlo , as a result , a critical curve of multipactor was gained
提出了一个改进型的次级电子倍增研究模型,利用蒙特卡罗法生成的随机样本来求解这个模型,得到了工作在2 . 85ghz的介质片的次级电子倍增敏感度曲线。
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| 8. | The theory of seea is based on the insulator ' s surface emitted secondary electrons when bombarded by electron , includes the process of electron - simulated desorption ( esd ) , the process of desorption gas ionization and the process of the ion influencing the flashover
Seea理论以绝缘子表面在电子轰击下发射二次电子为基础，包含了电子诱发脱附( esd ) ，和脱附气体离子化并对闪络过程产生影响等过程，对表面闪络现象进行了解释。
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| 9. | In this paper based on the theory of the low energy electrons , the movement of the irons in the counter is analyzed . the theories of sputtering and secondary electron emission are discussed respectively . the irons " action and effect on the counter are putted forward
本文从低能电子发射机理入手，分析了计数管内部离子运动情况，讨论了离子溅射和二次电子发射，提出了离子与计数管内壁相互作用及其对计数管的影响，给出了计数管内壁表面处理仿真图。
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| 10. | The numerical computing methods of the equations involving the static electric - magnetic field , electronic motion in the static electric - magnetic field , and so on are detailed . the methods of the boundary disposal are introduced . the phenomenon of secondary electron emission has also been studied
介绍了数值计算方法,包括静电磁场的数值计算、在静电静磁场中电子运动轨迹的数值计算、空间电荷密度的数值计算和空间电位分布的数值计算;介绍了边界处理方法。
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